G4y 152p datasheet

Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline

维库电子市场网为您提供de2a-12v产品信息,本信息由深圳市佳芯恒业科技有限公司发布,包含了de2a-12v的相关信息,电子元器件采购就上维库电子市场网(www.dzsc.com)。

G4PH40KD IRG4PH40KD Components datasheet pdf data sheet FREE from Datasheet4U.com Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes.

Browse millions of electronic components or search by part number at Datasheets360.com. scope: This standard applies to single-family detached and attached residences with independent thermal systems. This standard applies to air, hydronic, and electric distribution systems. Preliminary Datasheet RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline DERF DERF ELECTRONICS CORP. Call Toll Free 1 Biehn Street, New Rochelle, NY 10801 1-800-431-2912 Phone (914) 235-4600 • Fax (914) 235 2138 (Outside NY) C C The G4Y-152P-12VDC parts manufactured by OMRON are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers.