4800agm mosfet datasheet

N-Channel Enhancement Mode Field Effect Transistor Jan 2003 Features V DS (V) = 30V I D = 11A R DS(ON) < 15mΩ (V GS = 10V) R DS(ON) < 24mΩ (V GS = 4.5V) General Description The AO4422 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.

Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Features • Built using reliable, low power CMOS processes • Latchproof. Withstands 500mA Inductive Kickback the end of the data sheet. 3 Description This 11 mΩ, 60 V TO-220 NexFET™ power MOSFET Absolute Maximum Ratings is designed to minimize losses in power conversion TA = 25°C VALUE UNIT applications. V DS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 50 Continuous Drain Current ...

Request Advanced Power Electronics Corp. AP4800AGM: Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness online from Elcodis, view and download AP4800AGM pdf datasheet, MOSFETs, GaNFETs - Single specifications. Quad 1.2A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Features • Built using reliable, low power CMOS processes • Latchproof. Withstands 500mA Inductive Kickback

ZXM61N03F 30V N-channel enhancement mode MOSFET datasheet Keywords Zetex - ZXM61N03F 30V N-channel enhancement mode MOSFET datasheet DC-DC conversion Power management functions Disconnect switches Motor control Low on-resistance Fast switching speed Low threshold Low gate drive SOT23 package n-channel enhancement mode vertical dmos fet issue 2 – june 94 features * 60 volt v ds *r ds(on) =1Ω absolute maximum ratings. parameter symbol value unit N-Channel Enhancement Mode Field Effect Transistor Jan 2003 Features V DS (V) = 30V I D = 11A R DS(ON) < 15mΩ (V GS = 10V) R DS(ON) < 24mΩ (V GS = 4.5V) General Description The AO4422 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.