4c06n datasheet

For a board with 4 PWM phases doubled properly to 8 phases of 4C09N and 4C06N (V_GS= 4.5V worst case) I preliminary crunched the numbers (i.e. needs checking) and got ~1.38W per high side fet for switching loss and 1.65W per low side fet (includes deadtime low side switching losses and since it's not doubled low side , use datasheet value for ...

Datasheet: Electronics Description: TE Connectivity Ltd: 492703-1 REVISED PER ECR 11-020518: 492703-1 THIS DRAWING IS A CONTROLLED DOCUMENT. Tyco Electronics: 492782-1 THIS DRAWING IS A CONTROLLED DOCUMENT FOR TYCO ELECTRONICS CORPORATION. TE Connectivity Ltd: 492783-1 REVISED PER ECR 11-020518

BSC016N06NS OptiMOSTM Power-MOSFET Features • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according to JEDEC1) for target applications OptiMOS ====Power-Transistor Features • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated •=175°C operating temperature Product Summary Drain source voltage VDS 55 V Drain-source on-state resistance RDS(on) 7 mΩ Continuous drain current ID 80 A Pin 1 PIN 2/4 PIN 3 G D S Type Package Ordering Code NTMFS4C06N Power MOSFET 30 V, 69 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • CPU Power Delivery • DC ... Data Sheet 3 Rev. 1.1, 2011-09-01 Smart Low-Side Power Switch HITFET BTS3405G 1Overview Features • Low input current • Short circuit and Overload protection • Current limitation • Input protection (ESD) • Thermal protection with auto restart • Compatible to standard Power MOSFET • Analog driving possible • Two channel concept ...

UNISONIC TECHNOLOGIES CO., LTD UTT120N06 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT120N06 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. NTMFS4835N www.onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) R JC 2.0 Junction −to Ambient – Steady State (Note 3) R JA 55.1 °C/W This is a low current consumption (1.5µA typ.), ultra-small CMOS regulator with ON/OFF control function. The ON/OFF control pin logic for ~ MM3055F and MM3055R is reversed. Title: 2N7002W Author: Diodes Incorporated Subject: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Keywords: Low-On ResistanceLow Gate Threshold VoltageLow Input CapacitanceFast Switching SpeedLow Input/Output LeakageUltra-Small Surface Mount PackageTotally Lead-Free & Fully RoHS compliant (Notes 1 & 2)Halogen and Antimony Free. ON Semiconductor 4C10N MOSFET are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for ON Semiconductor 4C10N MOSFET.